Compositional, Structural, Morphological, and Optical Properties of ZnO Thin Films Prepared by PECVD Technique

ZnO thin films were synthesized on silicon and glass substrates using the plasma-enhanced chemical vapor deposition (PECVD) technique. Three samples prepared at temperatures of 200, 300, 400 °C. The surface composition was analyzed by use X-Ray Photoelectron spectroscopy (XPS). Structural morphological properties studied X-ray diffraction (XRD) scanning electron microscopy (SEM). Optical carried out UV-visible spectroscopy. XPS spectra showed typical peaks Zn(2p3/2), Zn(2p1/2), O(1s) with a slight shift attributed to substrate temperature. XRD analysis revealed hexagonal wurtzite phases preferred (002) growth orientation that improved Calculation grain size dislocation density crystallization improvement when temperature varied from 200 SEM images textured surfaces composed grains spherical shape uniformly distributed. transmittance yields are reaching 80%, values band-gap energy indicate PECVD present transparent semiconducting properties.